Aiming at the CMP solution of single crystal SiC, the catalytic efficiency of Fe-based solid catalysts such as Fe, FeO, Fe2O3 and Fe3O4 are studied. When Fe3O4 is used as the catalyst of Fenton reaction, an obviously chemical reaction happens on the surface of SiC and a relatively soft SiO2 layer which is easier to be removed is generated, and the highest material removal rate which is 17.2 mg/h and the minimum surface roughness which is Ra2.5 nm are obtained after chemical mechanical polishing. Fe3O4 is more appropriate for CMP of SiC compared with other solid catalysts such as Fe, FeO and Fe2O3. The concentration and stability of Fe2+ in chemical polishing solution are crucial factors deciding the rate and stability of Fenton reaction, and the concentration of Fe2+ is directly affected by the ability of ionizing free Fe2+ of solid catalyst. The stronger the ability of ionizing free Fe2+ of solid catalyst is, the higher the concentration of Fe2+ in polishing solution will be, and then the faster the rate of Fenton reaction will be. In this case, a higher material removal rate and a better polishing quality of SiC will be obtained in CMP.
XU Shaoping
,
LU Jiabin
,
YAN Qiusheng
,
SONG Tao
,
PAN Jisheng
. Solid Catalysts Based on Fenton Reaction for SiC Wafer in Chemical Mechanical Polishing[J]. Journal of Mechanical Engineering, 2017
, 53(21)
: 167
-173
.
DOI: 10.3901/JME.2017.21.167
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