HiPIMS电源的设计基础及研究进展

巩春志,吴厚朴,胡天时,田修波

中国表面工程 ›› 2022, Vol. 35 ›› Issue (5) : 1-9.

PDF(812 KB)
PDF(812 KB)
中国表面工程 ›› 2022, Vol. 35 ›› Issue (5) : 1-9. DOI: 10.11933/j.issn.1007-9289.20220228001

HiPIMS电源的设计基础及研究进展

  • 巩春志,吴厚朴,胡天时,田修波
作者信息 +

Design Basis and Research Progress of HiPIMS Power Supply

  • GONG Chunzhi, WU Houpu, HU Tianshi, TIAN Xiubo
Author information +
文章历史 +

摘要

作为高功率脉冲磁控溅射(HiPIMS)技术的核心组成部分,HiPIMS 电源在很大程度上决定着 HiPIMS 技术的研究进展和应用潜能。关于 HiPIMS 电源的研究整体上可以分为三个部分,分别是 AC-DC 功率变换器的研究、DC-DC 功率变换器的研究以及 HiPIMS 功率负载的研究。其中,功率变换器是 HiPIMS 电源的直流供电端,技术特征依赖于脉冲电源共性技术, 而功率负载部分则与 HiPIMS 放电模式相互影响。在综述脉冲电源的核心技术高动态响应、低输入电流纹波、高电压增益、 高性能功率校正因数等研究现状的基础上,进一步总结基于 HiPIMS 放电特性的脉冲功率负载设计的研究现状,并展望 HiPIMS 电源亟待解决的关键问题,最终得出大功率 HiPIMS 电源需要从电力电子技术和等离子体物理技术两方面同步开展研究,指出基于真空等离子体物理特性的复合脉冲放电技术,将成为 HiPIMS 电源技术跳跃发展的必由之路。通过 HiPIMS 电源的设计基础及研究进展,为 HiPIMS 电源的进一步发展提供一定参考。

Abstract

As the core component of high power magnetron sputtering (HiPIMS) technology, HiPIMS power supply largely determines the research progress and application potential of HiPIMS technology. On the whole, the research on HiPIMS power supply can be divided into three parts: the research of AC-DC power converter, DC-DC power converter and HiPIMS plasma power load. Among them, the power converter is the DC power supply end of HiPIMS power supply, and its technical characteristics depend on the common technology of pulse power supply, while the power load part interacts with the discharge mode of HiPIMS. On the basis of summarizing the research status of the core technologies of pulse power supply: high dynamic response, low input current ripple, high voltage gain and high performance power correction factor. The research status of pulse power load design based on HiPIMS discharge characteristics are summarized, and finally the key problems to be solved in HiPIMS power supply is discussed, it is expected to provide some reference for the further development of HiPIMS.

关键词

HiPIMS 电源;功率变换器;功率负载

Key words

HiPIMS power supply; power converter; power load

引用本文

导出引用
巩春志,吴厚朴,胡天时,田修波. HiPIMS电源的设计基础及研究进展[J]. 中国表面工程, 2022, 35(5): 1-9 https://doi.org/10.11933/j.issn.1007-9289.20220228001
GONG Chunzhi, WU Houpu, HU Tianshi, TIAN Xiubo. Design Basis and Research Progress of HiPIMS Power Supply[J]. China Surface Engineering, 2022, 35(5): 1-9 https://doi.org/10.11933/j.issn.1007-9289.20220228001

参考文献

[1] KOUZNETSOV V,MACáK K,SCHNEIDER J M,et al.A novel pulsed magnetron sputter technique utilizing veryhigh target power densities[J].Surface & CoatingsTechnology,1999,122(2-3):290-293.
[2] LIN J,MOORE J J,SPROUL W D,et al.The structureand properties of chromium nitride coatings depositedusing dc,pulsed dc and modulated pulse power magnetronsputtering[J].Surface and Coatings Technology,2010,204(14):2230-2239.
[3] MATTIAS S,DANIEL L,JENS J,et al.On the filmdensity using high power impulse magnetron sputtering[J].Surface and Coatings Technology,2010,205(2):591-596.
[4] BOHLMARK J,LATTEMANN M,GUDMUNDSSON JT,et al.The ion energy distributions and ion fluxcomposition from a high power impulse magnetronsputtering discharge[J].Thin Solid Films,2006,515(4):1522-1526.
[5] ANDERS A,ANDERSSON J,EHIASARIAN A.Highpower impulse magnetron sputtering:current-voltage-timecharacteristics indicate the onset of sustainedself-sputtering[J].Journal of Applied Physics,2007,102(11):113303.
[6] ANDERS A.Discharge physics of high power impulsemagnetron sputtering[J].Surface and Coatings Technology,2011,205:s1-s9.
[7] ANDERS A,PAVEL N,ALBERT R.Drifting localizationof ionization runaway:unraveling the nature of anomaloustransport in high power impulse magnetron sputtering[J].Journal of Applied Physics,2012,111(5):053304.
[8] EHIASARIAN A P,HECIMOVIC A,ARCOS T D L,etal.High power impulse magnetron sputtering discharges:Instabilities and plasma self-organization[J].AppliedPhysics Letters,2012,100(11):114101.
[9] NIKOLAY B,TIBERIU M,STEPHANOS K,et al.Plasma diagnostics for understanding the plasma–surfaceinteraction in HiPIMS discharges:a review[J].Journal ofPhysics D:Applied Physics,2014,47:224001.
[10] MARTIN R,NILS B,MICHAEL A R,et al.Optimizingthe deposition rate and ionized flux fraction by tuning thepulse length in high power impulse magnetronsputtering[J].Plasma Sources Science and Technology,2020,29(5):05LT01.
[11] GUDMUNDSSON J T,BRENNING N,LUNDIN D,et al.High power impulse magnetron sputtering discharge[J].Journal of Vacuum Science & Technology A:Vacuum,Surfaces,and Films,2012,30(3):030801.
[12] SARAKINOS K,ALAMI J,KONSTANTINIDIS S.High power pulsed magnetron sputtering:a review onscientific and engineering state of the art[J].Surface andCoatings Technology.2010,204(11):1661-1684.
[13] EHIASARIAN A P,WEN J G,PETROV I.Interfacemicrostructure engineering by high power impulsemagnetron sputtering for the enhancement of adhesion[J].Journal of Applied Physics,2007,101(5):054301.
[14] ANDERS A.A review comparing cathodic arcs and highpower impulse magnetron sputtering(HiPIMS)[J].Surface and Coatings Technology,2014,257(25):308-325.
[15] ANDERS A.Deposition rates of high power impulsemagnetron sputtering:Physics and economics[J].Journalof Vacuum Science & Technology A,2010,28(14):783-790.
[16] ZHANG Haibao,SHIARN C,CHEN Qiang.Recentprogress on high power impulse magnetron sputtering(HiPIMS):the challenges and applications in fabricatingVO2 thin film[J].AIP Advances,2019,9(3):035242.
[17] JI Chengding,QI Minwang,ZHE Renliu,et al.Influenceof bias voltage on the microstructure,mechanical andcorrosion properties of AlSiN films deposited by HiPIMStechnique[J].Journal of Alloys and Compounds,2019,772(25):112-121.
[18] WAN Yuwu,MAN Y C,YU H H,et al.Bioapplication ofTiN thin films deposited using high power impulsemagnetron sputtering[J].Surface and Coatings Technology,2019,362(25):167-175.
[19] ZAUNER L,ERTELTHALER P,WOJCIK T,et al.Reactive HiPIMS deposition of Ti-Al-N:Influence of thedeposition parameters on the cubic to hexagonal phasetransition[J].Surface and Coatings Technology,2020,382(25):125007.
[20] SHENG Chichen,TSUNG Yenkuo,HSIN Chihlin,et al.Optoelectronic properties of p-type NiO films depositedby direct current magnetron sputtering versus high powerimpulse magnetron sputtering[J].Applied Surface Science,2020,508(1):145106.
[21] BRENNING N,BUTLER A,HAJIHOSEINI H,et al.Optimization of HiPIMS discharges:the selection of pulsepower,pulse length,gas pressure,and magnetic fieldstrength[J].Journal of Vacuum Science & Technology A,2020,38(3):033008.
[22] TH?RNBERG J,PALISAITIS J,HELLGREN N,et al.Microstructure and materials properties ofunderstoichiometric TiBx thin films grown by HiPIMS[J].Surface and Coatings Technology,2020,404(25):126537.
[23] MEI Haijuan,DING Jicheng,XIAO Xiaolan,et al.Influence of pulse frequency on microstructure andmechanical properties of Al-Ti-V-Cu-N coatings depositedby HIPIMS[J].Ceramics International,2021,405(15):126514.
[24] YATSUI K,JIANG W,SUEMATSU H,et al.Industrialapplications of pulsed particle beams and pulsed powertechnologies[C]//2004 International Conference onHigh-Power Particle Beams,July 18-23,2004,St.Petersburg.IEEE,2004:613-617.
[25] 江伟华.高重复频率脉冲功率技术及其应用:概述[J].强激光与粒子束,2012,24:10-15.JIANG Weihua.Repetition rate pulsed power technologyand its applications:(i)Introduction[J].High Power Laserand Particle Beams,2012,24:10-15.(in Chinese)
[26] LEYH G E.The marx modulator development programfor the international linear collider[C]//ConferenceRecord of the 2006 Twenty-Seventh International PowerModulator Symposium,May 14-18,2006,Arlington,VA,USA.IEEE,2006:423-426.
[27] VISWANATHAN K,ORUGANTI R,SRINIVASAN D.ANovel tri-state boost converter with fast dynamics[J].IEEE Transactions on Power Electronics,2002,17(5):677-683.
[28] VISWANATHAN K,ORUGANTI R,SRINIVASAN D.Dual-mode control of tri-state boost converter forimproved performance[J].IEEE Transactions on PowerElectronics,2005,20(4):790-797.
[29] RANA N,KUMAR M,GHOSH A,et al.A novelinterleaved tri-state boost converter with lower rippleand improved dynamic response[J].IEEE Transactions onIndustrial Electronics,2018,65(7):5456-5465.
[30] 谷雨.宽重复频率独立式脉冲功率直流电源系统关键技术研究[D].哈尔滨:哈尔滨工业大学,2017.GU Yu.Research on key technique of independent widerepeat frequency pulsed power DC power supplysystem[D].Harbin:Harbin Institute of Technology,2017.(in Chinese)
[31] RUAN X B,LI B,CHEN Q H,et al.Fundamentalconsiderations of three-level DC/DC converters:topologies,analyses,and control[J].IEEE Transactions onPower Electronics,2008,55(11):3733-3743.
[32] LIU C,LAI J S.Low frequency current ripple reductiontechnique with active control in a fuel cell power systemwith inverter load[J].IEEE Transactions on PowerElectronics,2007,22(4):1429-1436.
[33] ZHAO Y,LI W,HE X.Single-phase improved activeclamp coupled-inductor-based converter with extendedvoltage doubler cell[J].IEEE Transactions on PowerElectronics,2012,27(6):2869-2878.
[34] HUBER L,JANG Y Z,JOVANOVIC M M.Performanceevaluation of bridgeless PFC boost rectifiers[J].IEEEtransactions on power electronics,2008,23(3):1381-1390.
[35] JEONG S G,KWON J M,KWON B H.High-efficiencybridgeless single-power-conversion battery charger forlight electric vehicles[J].IEEE Transactions on IndustrialElectronics,2019,66(1):215-222.
[36] VALIZADEH A,VARJANI A Y.A bridgeless softswitching PFC AC/DC converter with active clampingauxiliary circuit[C]//12th Power Electronics,DriveSystems,and Technologies Conference(PEDSTC).February 2-4,2021,Tabriz,Iran.IEEE,2021:1-6.
[37] ANDERS A,ANDERSSON J,EHIASARIAN A.Highpower impulse magnetron sputtering:current-voltagetime characteristics indicate the onset of sustainedself-sputtering[J].Journal of Applied Physics,2007,102(11):113303.
[38] PAPA F,GERDES H,BANDORF R,et al.Deposition ratecharacteristics for steady state high power impulsemagnetron sputtering(HIPIMS)discharges generated witha modulated pulsed power(MPP)generator[J].Thin SolidFilms:An International Journal on the Science andTechnology of Thin and Thick Films,2011(5):1123-1126.
[39] 桂刚,田修波,朱宗涛,等.1 kA 高功率脉冲磁控溅射电源研制及试验研究[J].真空,2011,48(4):46-50.GUI Gang,TIAN Xiubo,ZHU Zhongtao,et al.Development of 1 kA high power pulsed magnetronsputtering power supply[J].Vacuum,2011,48(4):46-50.(in Chinese)
[40] 田修波,吴忠振,石经纬,等.高脉冲功率密度复合磁控溅射电源研制及放电特性研究[J].真空,2010,47(3):44-47.TIAN Xiubo,WU Zhongzhen,SHI Jingwei,et al.Development and discharge behavior of high powerdensity pulse magnetron sputtering system[J].Vacuum,2010,47(3):44-47.(in Chinese)
[41] 王洪国,陈庆川,韩大凯,等.高功率脉冲磁控溅射电源的研制[J].真空科学与技术学报,2013,33(2):168-170.WANG Hongguo,CHEN Qingchuan,HAN Dakai,et al.Novel type of power supply for high-power pulsedmagnetron sputtering[J].Chinese Journal of VacuumScience and Technology,2013,33(2):168-170.(in Chinese)
[42] 张秀梅,李红泽,刘洋,等.8 MW 单极性脉冲磁控溅射电源的设计[J].电力电子技术,2017,51(6):75-76.ZHANG Xiumei,LI Hongze,LIU Yang,et al.Design of 8MW unipolar pulse magnetron sputtering power supply[J].Power Electronics,2017,51(6):75-76.(in Chinese)
[43] 魏松.可调脉冲高功率磁控溅射电源研制及AlCrN薄膜制备[D].哈尔滨:哈尔滨工业大学,2013.WEI Song.Development of modulated pulsed powermagnetron sputtering system and preparation of alcrnfilms[D].Harbin:Harbin Institute of Technology,2013.(in Chinese)
[44] KARKARI S K,ELLINGBOE A R,GAMAN C,et al.Electron density modulation in an asymmetric bipolarpulsed dc magnetron discharge[J].Journal of AppliedPhysics,2007(6):135-142.
[45] KRAUSE U,LIST M,FUCHS H.Requirements of powersupply parameters for high-power pulsed magnetronsputtering[J].Thin Solid Films:An International Journalon the Science and Technology of Thin and Thick Films,2001(2):1123-1128.
[46] PHITSANU P,BERND L,JAMES B.Plasma parametersin a pre-ionized HIPIMS discharge operating at lowpressure[J].IEEE Transactions on Plasma Science,2010,38(11):3007-3015.
[47] WU B,HAEHNLEIN I,SHCHELKANOV I,et al.Cufilms pre-pared by bipolar pulsed high power impulsemagnetron sputtering[J].Vacuum,2018,150:216-221.
[48] 吴厚朴,田钦文,田修波,等.新型双极性高功率脉冲磁控溅射电源及放电特性研究[J].真空,2019,56(6):1-6.WU Houpu,TIAN Qinwen,TIAN Xiubo,et al.Development and discharge behavior of novel doublebipolar pulse high power impulse magnetron sputteringsystem[J].Vacuum,2019,56(6):1-6.(in Chinese)
[49] OSKIRKO V O,ZAKHAROV A N,PAVLOV A P,et al.Hybrid HIPIMS+MFMS power supply for dual magnetronsputtering systems[J].Vacuum,2020,181:109670.
[50] OSKIRKO V O,ZAKHAROVA A N,PAVLOV A P,et al.Hybrid HIPIMS+MFMS power supply for dual magnetronsputtering systems[J].Vacuum.2020,181:109670.
[51] LIN JIANLIANG,MOORE J J.,SPROUL W D,et al.Thestructure and properties of chromium nitride coatingsdeposited using dc,pulsed dc and modulated pulse powermagnetron sputtering[J].Surface and Coatings Technology,2010,204(14):2230-2239.
[52] LIN Jianliang,WILLIAM D S,JOHN J M,et al.High ratedeposition of thick CrN and Cr2N coatings usingmodulated pulse power(MPP)magnetron sputtering[J].Surface and Coatings Technology,2011,205(10):3226-3234.
[53] GRECZYNSKI G,LU J,JENSEN J,et al.A review ofmetal-ion-flux-controlled growth of metastable TiAlN byHIPIMS/DCMS co-sputtering[J].Surface and CoatingsTechnology,2014,257(25):15-25.
[54] JULIEN K,ROMMEL P B V,MICHAEL A R,et al.Bipolar HiPIMS for tailoring ion energies in thin filmdeposition[J].Surface and Coatings Technology,2019,359(15):433-437.
[55] IOANA L V,GABRIELA T I,CORNELIU P,et al.Energy-enhanced deposition of copper thin films bybipolar high power impulse magnetron sputtering[J].Surface and Coatings Technology,2019,359(15):97-107.
[56] HIPPLER R,CADA M,STRANAK V,et al.Time-resolved optical emission spectroscopy of a unipolarand a bipolar pulsed magnetron sputtering discharge in anargon/oxygen gas mixture with a cobalt target[J].PlasmaSources Science and Technology,2019,28(11):115020.
[57] ROMMEL P B V,GU Jiabin,ROBERT B,et al.Bipolarhigh power impulse magnetron sputtering for energeticion bombardment during TiN thin film growth without theuse of a substrate bias[J].Thin Solid Films,2019,688(31):137350.
[58] TIRON V,URSU E L,CRISTEA D,et al.Overcomingthe insulating materials limitation in HiPIMS:Ion-assisteddeposition of DLC coatings using bipolar HiPIMS[J].Applied Surface Science,2019,494(15):871-879.
[59] EMILE H A,AMINE A A,ABDELOUADOUD G B C Det al.Achieving on chip micro-supercapacitors based onCrN deposited by bipolar magnetron sputtering atglancing angle[J].Electrochimica Acta,2019,324(20):134890.
[60] RAINER H,MARTIN C,ZDENEK H.Time-resolvedlangmuir probe diagnostics of a bipolar high power impulse magnetron sputtering discharge[J].AppliedPhysics Letters,2020,116(6):064101.
[61] JING P P,MA D L,GONG Y L,et al.Influence of Agdoping on the microstructure,mechanical properties,andadhesion stability of diamond-like carbon films[J].Surface and Coatings Technology,2021,405(15):126542.
[62] WOLFGANG T,DIEGO G,DOMINIC S,et al.Residualstresses and tribomechanical behaviour of TiAlN andTiAlCN monolayer and multilayer coatings by DCMS andHiPIMS[J].Surface and Coatings Technology,2021,406(25):126664.
[63] GUI Binhua,ZHOU Hui,ZHENG Jun,et al.Microstructure and properties of TiAlCrN ceramiccoatings deposited by hybrid HiPIMS/DC magnetronco-sputtering[J].Ceramics International,2021,47(6):8175-8183.
[64] NILS B,HAMIDREZA H,MARTIN R,et al.HiPIMSoptimization by using mixed high-power and low-powerpulsing[J].Plasma Sources Science and Technology,2021,30(1):015015.
[65] KIMIYASU S,YUICHI T,YUSUKE I.Nanocellulosesand Related Materials Applicable in Thermal Managementof Electronic Devices:a Review[J].Nanomaterials,2020,10(3):448.
[66] ZHANG Y C,GE X L,WANG H M,et al.A novelthree-pulse equivalent power loss profile forsimplified thermal estimation[J].IEEE Journal ofEmerging and Selected Topics in Power Electronics,2021,9(6):6875-6885.
[67] SMIRNOV V I,SERGEEV V A,SHORIN A M,et al.Thermal impedance meter for power MOSFETand IGBT transistors[J].IEEE Transactions on PowerElectronics,2018,33(7):6211-6216.
[68] TAN K,COULBECK L.Proper pulsewidth setting toavoid underestimated switching loss in HVIGBT characterization[J].IEEE Transactions on PowerElectronics,2022,37(4):3781-3785.
[69] CHRISTIE D J,TOMASEL F,SPROUL W D,et al.Power supply with arc handling for high peak powermagnetron sputtering[J].Journal of Vacuum Science &Technology,A.Vacuum,Surfaces,and Films,2004(4):256-260.
[70] OSKIRKO V O,SEMENOV V D,SOLOVYEV A A,et al.Arc energy minimization in high-power impulsemagnetron sputtering[J].Vacuum,2022,202:111213.
[71] ANDERS A.A review comparing cathodic arcs and highpower impulse magnetron sputtering(HiPIMS)[J].Surface and Coatings Technology,2014,257:308-325.
[72] GUDMUNDSSON J T,BRENNING N,LUNDIN D,et al.High power impulse magnetron sputtering discharge[J].Journal of Vacuum Science & Technology A,2012,30:3,030801.
[73] CARTER D C.Arc prevention in magnetron sputteringprocesses[C].51st annual technical conference proceedings,Chicago,IL,2008:0737-5921.
[74] Generate high density plasmas for superior depositionresults:TruPlasma Highpulse Series 4000 for HIPIMSprocesses[EB/OL].https://www.trumpf.cn/zh_CN/truplasma-bipolar-serie-4000-g21/.
[75] SAMAEI A,CHAUDHURI S.Multiphysics modeling ofmetal surface cleaning using atmospheric pressureplasma[J].Journal of Applied Physics,2020,128(5):054903.
[76] SANNER R M,ESLOTINE J J.Gaussian networks fordirect adaptive control[J].IEEE Trans on NeuralNetworks,1992,3(6):837-863.
PDF(812 KB)

285

Accesses

0

Citation

Detail

段落导航
相关文章

/