采用化学气相沉积法制备单晶体氧化锌微/纳米带,通过银膏将其固定在镀有二氧化硅绝缘层的硅基板上,用镀有铂金属的导电原子力显微镜探针触碰单晶体氧化锌微/纳米带,构成测量回路。通过试验获得氧化锌微/纳米带电阻与其长度呈非线性关系,并且当长度到达切断长度时,微/纳米带电阻突然增大;试验测得切断长度为17.5 μm,且切断长度附近的电阻与长度关系也是非线性。建立氧化锌微/纳米带的平面导电模型,说明在氧化锌微/纳米带中电子倾向于在主导电平面内运动。分析得出单晶体氧化锌微/纳米带晶格面的各向异性是使其电阻与长度呈指数的增长关系的主要原因,与试验相符。此外,通过向氧化锌内掺杂Bi2O3、Co2O3等杂质发现,杂质的加入能使氧化锌微/纳米带的电阻与长度的非线性关系发生改变。
戴冰
,
于广滨
,
邵俊鹏
,
刘迪
,
陈巨辉
,
宋金会
. 单晶体氧化锌微/纳米带电阻与长度的特性研究[J]. 机械工程学报, 2016
, 52(12)
: 199
-204
.
DOI: 10.3901/JME.2016.12.199
The single crystal zinc oxide micro/nanobelt(MB/NB) is synthesized by the method of chemical vapor deposition, then it is fixed on a silicon wafer which is coated with a silicon oxide insulating layer by silver paste. The Pt coated conductive atomic force microscope(AFM) probe, which acted as one electrode, scanned the MB/NB surface, which also acted as the other electrode, in tapping mode to acquire I-V curves. The measured result reveals that the electrical resistance of the ZnO MB/NB is exponential to its length, and when the length reaches the cut off length, the resistance increases suddenly. The cut off length is 17.5 μm by the experimental measured, and the I-V curves near the cut off length are non-linear also. A planar conductive model about the flow of electrons in ZnO MB/NB are proposed, through the analysis of model draw the conclusion that the electrons tend to move within the dominant conductive plane and the anisotropic of single crystal ZnO MB/NB with lattice plane is the main reason which lead to the nonlinear relationship between resistance and length. The results fit the experimental measurement well. In addition, by doping Bi2O3 and Co2O3, the nonlinear relationship between the length and the resistance of the ZnO MB/NB may change.
[1] WANG Xudong, SONG Jinhui, WANG Zhonglin. Single-crystal nanocastles of ZnO[J]. Chemical Physics Letters, 2006, 424(1)：86-90.
[2] ZHU Guang, WANG A C, LIU Ying, et al. Functional electrical stimulation by nanogenerator with 58 V output voltage[J]. Nano Lett., 2012, 12(6)：3086-3090.
[3] BLÖMERS C, LU J G, HUANG L, et al. Electronic transport with dielectric confinement in degenerate inn nanowires[J]. Nano Lett., 2012, 12(6)：2768-2772.
[4] ANDRIOTIS A N, MENON M, CHERNOZATONSKII L. Nonlinear resistance dependence on length in single-wall carbon nanotubes[J]. Nano Lett., 2003, 3(2)：131-134.
[5] LIAO L, ZHANG Z, YANG Y, et al. Tunable transport properties of n-type ZnO nanowires by Ti plasma immersion ion implantation[J]. J. Appl. Phys.,2008,104： 076104.
[6] XU Sheng,WANG Zhonglin. One-dimensional ZnO nanostructures：Solution growth and functional properties[J]. Nano Res.,2011,4(11)：1013-1098.
[7] LI M,SU Y J,CHU W Y,et al. Local piezoelectric effect on single crystal ZnO microbelt transverse I-V characteristics[J]. Appl. Phys. Lett.,2011,98：082105.
[8] JIANG Chengming,SONG Jinhui. Significant photoelectric property change caused by additional nano-confinement：A study of half-dimensional nanomaterials[J]. Small,2014,10(24)：5042-5046.
[9] ASTHANA A,MOMENI K,PRASAD A,et al. On the correlation of crystal defects and band gap properties of ZnO nanobelts[J]. Appl. Phys. Lett.,2011,105：909-914.
[10] LEE M S,KIM T Y,KIM D. Anisotropic electrical conductivity of delafossite-type CuAlO 2 laminar crystal[J]. Appl. Phys. Lett.,2001,79：2028.
