机械工程学报 >

2018 , Vol. 54 >Issue 19: 224 - 231

DOI: https://doi.org/10.3901/JME.2018.19.224

制造工艺与装备

不同氧化剂对6H-SiC化学机械抛光的影响

  • 倪自丰 ,
  • 陈国美 ,
  • 徐来军 ,
  • 白亚雯 ,
  • 李庆忠 ,
  • 赵永武
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  • 1. 江南大学机械工程学院 无锡 214122;
    2. 无锡商业职业技术学院机电技术学院 无锡 214153
陈国美,女,1982年出生,博士。主要研究方向为化学机械抛光。E-mail:cgm0208@163.com

收稿日期: 2017-10-11

  修回日期: 2018-05-09

  网络出版日期: 2018-10-05

基金资助

国家自然科学基金（51305166，51175228）和江苏省自然科学基金（BK20130143）资助项目。

收起

Effect of Different Oxidizers on Chemical Mechanical Polishing of 6H-SiC

  • NI Zifeng ,
  • CHEN Guomei ,
  • XU Laijun ,
  • BAI Yawen ,
  • LI Qingzhong ,
  • ZHAO Yongwu
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  • 1. School of Mechanical Engineering, Jiangnan University, Wuxi 214122;
    2. School of Mechanical and Electrical Engineering, Wuxi Vocational Institute of Commerce, Wuxi 214122

Received date: 2017-10-11

  Revised date: 2018-05-09

  Online published: 2018-10-05

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摘要

选用胶体SiO2纳米颗粒为磨粒，研究不同pH值条件下高锰酸钾和双氧水两种氧化剂对6H-SiC晶片化学机械抛光的影响，并使用原子力显微镜观察抛光后表面质量。采用Zeta电位分析仪分析溶液中胶体SiO2颗粒的Zeta电位，采用X射线光电子能谱分析SiC抛光表面元素及其化学状态。结果表明：SiC晶片的材料去除率随pH值变化而变化，采用高猛酸钾抛光液抛光时，材料去除率在pH 6时达到峰值185 nm/h，Ra为0.25 nm；采用双氧水抛光液抛光时，材料去除率在pH 8时达到峰值110 nm/h，Ra为0.32 nm。pH值低于5时，电负性的SiO2颗粒会通过静电作用吸附在带正电的SiC表面，抑制SiC晶片表面原子的氧化及去除，降低材料去除率；pH值高于5时，SiO2颗粒在双氧水抛光液中的静电排斥力弱于高锰酸钾抛光液中静电排斥力，从而影响了SiO2颗粒的分散性能，降低了抛光效果。采用高锰酸钾抛光液抛光后，SiC晶片表面的Si-C氧化产物含量（Si-C-O、Si4C4-xO2和Si4C4O4）较高，高锰酸钾抛光液的氧化能力较强。

关键词： 碳化硅; 化学机械抛光; 二氧化硅颗粒; 高锰酸钾; 双氧水

本文引用格式

倪自丰 , 陈国美 , 徐来军 , 白亚雯 , 李庆忠 , 赵永武 . 不同氧化剂对6H-SiC化学机械抛光的影响[J]. 机械工程学报, 2018 , 54(19) : 224 -231 . DOI: 10.3901/JME.2018.19.224

Abstract

The chemical mechanical polishing (CMP) performance of Si-face 6H-SiC substrates are compared between two different oxidizers (KMnO4 and H2O2) under different pH values, using colloidal silica nanoparticles as abrasives. The surface morphology of the polished SiC substrate is characterized using atomic force microscope (AFM). The Zeta potentials of silica particles in different solutions are investigated using zeta potential analyzer and the chemical composition of the polished surfaces is studied using X-ray photoelectron spectroscopy (XPS). The results indicate that there is a significant difference in the material removal rates (RRs) of 6H-SiC under different pH values. For the KMnO4 based slurries, the maximum RRs (185 nm/h) with an average roughness Ra of 0.25 nm is achieved at pH 6; for the H2O2 based slurries, the maximum RRs (110 nm/h) with an average roughness Ra of 0.32 nm is achieved at pH 8. Negative charged silica particles are expected to be attracted by positive charged SiC surface below pH 5, which might reduce the oxidation and removal of the SiC substrate; the electrostatic repulsive force of silica particles in the H2O2 based slurries is less than in the KMnO4 based slurries, thus influencing the dispersion properties of silica particles. The concentrations of the oxidized species of Si-C (Si-C-O, Si4C4-xO2 and Si4C4O4) are higher in the SiC surface polished with KMnO4 than in the pre-polished SiC surface and the surface polished with H2O2, which due to the higher oxidizing ability of KMnO4 than H2O2.

Key words： silicon carbide (SiC); chemical mechanical polishing (CMP); silica particles; KMnO4; H2O2

参考文献

[1] 王守国,张岩. SiC材料及器件的应用发展前景[J]. 自然杂志,2011,33(1):42-45. WANG Shouguo,ZHANG Yan. Application and development of SiC materials and devices[J]. Chinese Journal of Nature,2011,33(1):42-45.
[2] LUO Qiufa,LU Jing,XU Xipeng. Study on the processing characteristics of SiC and sapphire substrates polished by semi-fixed and fixed abrasive tools[J]. Tribology International,2016,104:191-203.
[3] 赵正平. SiC新一代电力电子器件的进展[J]. 半导体技术,2013,38(2):81-88. ZHAO Zhengping. Progress of the new generation SiC power electronic devices[J]. Semiconductor Technology,2013,38(2):81-88.
[4] 王世忠,徐良瑛,束碧云,等. SiC单晶的性质、生长及应用[J]. 无机材料学报,1999,14(4):527-534. WANG Shizhong,XU Liangying,SHU Biyun,et al. PH ysical properties,bulk growth,and applications of SiC single crystal[J]. Journal of Inorganic Materials,1999,14(4):527-534.
[5] LU Jing,WANG Yaguang,LUO Qiufa,et al. Photocatalysis assisting the mechanical polishing of a single-crystal SiC wafer utilizing an anatase TiO2-coated diamond abrasive[J]. Precision Engineering-Journal of the International Societies for Precision Engineering and Nanotechnology,2017,49:235-242.
[6] 甘阳,张飞虎. 单晶碳化硅和蓝宝石基片化学机械抛光的表面反应层形成机制的研究进展[J]. 科学通报,2016,36:3930-3939. GAN Yang,ZHANG Feihu. Review on formation mechanism of chemical reaction layer during chemical mechanical polishing of monocrystalline SiC and sapphire substrates[J]. Chinese Science Bulletin,2016,36:3930-3939.
[7] MURATA J,YODOGAWA K,BAN K. Polishing-pad-free electrochemical mechanical polishing of single-crystalline SiC surfaces using polyurethane-CeO2 core-shell particles[J]. International Journal of Machine Tools & Manufacture,2017,114:1-7.
[8] DENG Hui,HOSOYA K,IMANISHI Y,et al. Electro-chemical mechanical polishing of single-crystal SiC using CeO2 slurry[J]. Electrochemistry Communications,2015,52:5-8.
[9] HARA H,SANO Y,MIMURA H,et al. Novel abrasive-free planarization of 4H-SiC (0001) using catalyst[J]. Journal of Electronic Materials,2006,35(8):L11-L14.
[10] HARA H,SANO Y,MIMURA H. Novel abrasive-free planarization of Si and SiC using catalyst[M]. Towards Synthesis of Micro/Nano-systems,2007:267-270.
[11] ARIMA K,HARA H,MURATA J,et al. Atomic-scale flattening of SiC surfaces by electroless chemical etching in HF solution with Pt catalyst[J]. Applied Physics Letters,2007,90(20):202106-202106-3.
[12] YUAN Zewei,HE Yan,JIN Zhuji,et al. Prediction of the Interface Temperature Rise in Tribochemical Polishing of CVD Diamond[J]. Chinese Journal of Mechanical Engineering,2017,30(2):310-320.
[13] HAH S R,FISHER T E. Tribochemical polishing of silicon nitride[J]. Journal of the Electrochemical Society,1997,145(5):1708-1714.
[14] LIN Y C,KAO C H. A study on surface polishing of SiC with a tribochemical reaction mechanism[J]. International Journal of Advanced Manufacturing Technology,2004,25(1):33-40.
[15] ZHU Zhize,MURATOV V,FISHER T E. Tribochemical polishing of silicon carbide in oxidant solution[J]. Wear,1999,s 225-229(4):848-856.
[16] 郭钰,彭同华,刘春俊,等. 影响化学机械抛光4H导电SiC晶片表面质量的关键参数研究[J]. 人工晶体学报,2017,46(5):759-765. GUO Yu,PENG Tonghua,LIU Chunjun,et al. Key parameters of chemical mechanical polishing for obtaining defect free 4H-type conductive SiC substrate surface[J]. Journal of Synthetic Crystals,2017,46(5):759-765.
[17] CHEN Guomei,NI Zifeng,BAI Yawen,et al. The role of interactions between abrasive particles and the substrate surface in chemical-mechanical planarization of Si-face 6H-SiC[J]. RSC Advances,2017,7:16938-16952.
[18] 徐少平,路家斌,闫秋生,等. 单晶SiC化学机械抛光液的固相催化剂研究[J]. 机械工程学报,2017,53(21):167-173. XU Shaoping,LU Jiabin,YAN Qiusheng,et al. Solid catalysts based on fenton reaction for SiC wafer in chemical mechanical polishing[J]. Journal of Mechanical Engineering,2017,53(21):167-173.
[19] ZHOU Yan,PAN Guoshun,ZOU Chuili,et al. Chemical mechanical polishing (CMP) of SiC wafer using photo-catalyst incorporated pad[J]. ECS Journal of Solid State Science and Technology,2017,6(9):603-608.
[20] ZHU Honglin,TESSAROTO L A,SABIA R. Chemical mechanical polishing (CMP) anisotropy in sapphire[J]. Applied Surface Science,2004,236(1-4):120-130.
[21] ERYU O,ABE K,TAKEMOTO N. Nanostructure formation of SiC using ion implantation and CMP[J]. Nuclear Instruments and Methods in Physics Research Section B:Beam Interactions with Materials and Atoms,2006,242(242):237-239.
[22] DONG Lin,SUN Guosheng,YU Jun,et al. Growth of 4H-SiC epilayers with low surface roughness and morphological defects density on 4 degrees off-axis substrates[J]. Applied Surface Science,2013,270(4):301-306.
[23] CHEN Xiufang,XU Xiangang,HU Xiaobo,et al. Anisotropy of chemical mechanical polishing in silicon carbide substrates[J]. Materials Science & Engineering B,2007,142(1):28-30.
[24] SHI Xiaolei,PAN Guoshun,ZHOU Yan,et al. Characterization of colloidal silica abrasives with different sizes and their chemical-mechanical polishing performance on 4H-SiC (0001)[J]. Applied Surface Science,2014,307(10):414-427.
[25] LEE H,PARK B,JEONG S,et al. The effect of mixed abrasive slurry on CMP of 6H-SiC substrates[J]. Journal of Ceramic Processing Research,2009,10(3):378-381.
[26] ZHOU Ling,AUDURIER V,PIROUZ P,et al. Chemomechanical polishing of silicon carbide[J]. Journal of the Electrochemical Society,1997,144(6):161-163.
[27] NITTA H,ISOBE A,HONG P J,et al. Research on reaction method of high removal rate chemical mechanical polishing slurry for 4H-SiC substrate[J]. Japanese Journal of Applied Physics,2011,50(4):046501-046501-5.
[28] ZHOU Yan,PAN Guoshun,SHI Xiaolei,et al. Chemical mechanical planarization (CMP) of on-axis Si-face wafer using catalyst nanoparticles in slurry[J]. Surface & Coatings Technology,2014,251:48-55.
[29] OHNISHI O,DOI T,KUROKAWA S,et al. Effects of atmosphere and ultraviolet light irradiation on chemical mechanical polishing characteristics of SiC wafers[J]. Japanese Journal of Applied Physics,2012,51(5):4403-4408.
[30] SU Jianxiu,DU Jiaxi,MA Lijie,et al. Material removal rate of 6H-SiC crystal substrate CMP using an alumina (Al2O3) abrasive[J]. Journal of Semiconductors,2012,33(10):106003.
[31] 陈国美. 碳化硅晶片超精密抛光工艺及机理研究[D]. 无锡:江南大学,2017. CHEN Guomei. Study on the ultra-precison polishing technology and mechanism of silicon carbide substrates[D]. Wuxi:Jiangnan University,2017.
[32] CHEN Guomei,NI Zifeng,XU Laijun,et al. Performance of colloidal silica and ceria based slurries on CMP of Si-face 6H-SiC substrates[J]. Applied Surface Science,2015,359:664-668.
[33] 徐进,苏亚,潘国顺,等. pH值和浓度对CeO2抛光液性能影响的研究[J]. 润滑和密封,2005(4):9-11. XU Jin,SU Ya,PANG Guoshun,et al. The effect of pH Value and solid concentration on the properties of cerium oxide slurry[J]. Lubrication Engineering,2005(4):9-11.
[34] LAGUDU U R K,ISONO S,KRISHNAN S,et al. Role of ionic strength in chemical mechanical polishing of silicon carbide using silica slurries[J]. Colloids & Surfaces A:Physicochemical & Engineering Aspects,2014,445(6):119-127.
[35] SINGH B P,JENA J,BESRA L,et al. Dispersion of nano-silicon carbide (SiC) powder in aqueous suspensions[J]. Journal of Nanoparticle Research,2007,9(5):797-806.
[36] MICHEL R,AHMED A,KARIN S,et al. Covalent attachment of organic monolayers to silicon carbide surfaces[J]. Langmuir the Acs Journal of Surfaces & Colloids,2008,24(8):4007-4012.
[37] HORNETZ B,MICHEL H J,HALBRITTER J. ARXPS studies of SiO2-SiC interfaces and oxidation of 6H SiC single crystal Si-(001) and C-(001) surfaces[J]. Journal of Materials Research,1994,9(12):3088-3094.
[38] YAMAMURA K,TAKIGUCHI T,UEDA M,et al. Plasma assisted polishing of single crystal SiC for obtaining atomically flat strain-free surface[J]. CIRP Annals-Manufacturing Technology,2011,60(1):571-574.
[39] 唐春华. 双氧水的特性及其在表面处理工业中的应用[J]. 电镀与环保,1989,9(1):14-19. TANG Chunhua. The characteristics of hydrogen peroxide and its applications in surface treatment industry[J]. Electroplating & Pollution Control,1989,9(1):14-19.
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